Lowtemperature epitaxial growth and photoluminescence characterization of GaN
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منابع مشابه
Analysis of the Efficient High-Temperature In Situ Photoluminescence from GaN Layers during Epitaxial Growth
Photoluminescence (PL) in GaN or InGaN layers monitored during epitaxial growth at high temperatures permits a quasi-continuous in situ characterization of opto-electronic properties. Therefore, epitaxial parameters can now be optimized at the earliest possible stage. A pulsed and high-power UV laser was required for PL excitation at high temperatures. Herein, the underlying nonlinear mechanism...
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تاریخ انتشار 2014